The results give a reference to further application to organic optoelectronic device of the target compound. 研究结果为进一步研究其在有机光电器件中的应用提供了参考。
An Optoelectronic Device for mm-Size Projectile Velocity Measurement 用于毫米级弹丸速度测量的光电检测装置
The work has been done as follows: ( 1) Hybrid integration based on PLC is used for the integration method of the special detecting purpose optoelectronic integration device, and light transmission method is used for the detection means. 确定用于特种检测的光电集成器件的集成方式为基于平面光波回路的混合集成;检测方式为透射式方案。
As an environmentally benign and economically viable optoelectronic device material, amorphous carbon ( a-C) films are of interests in various applications. 作为一种经济适用并且环境友好的光电器件材料,非晶碳薄膜因其众多优良的特性而引起广泛研究兴趣。
In this approach, a CCD line is used as both a spacial filter and an optoelectronic transform device. 采用CCD线阵同时作为空间滤波器和光电转换器件。
The Implementation of the Optoelectronic Device Models in Microwave Nonlinear Circuit Simulator 光电器件模型在微波非线性电路模拟器中的实现
Special attention was put on production of millimeter wave, choice of optoelectronic device, architecture of down and up fiber optic links, etc. 尤其是对于毫米波信号的产生、光电子器件的选择、光链路的结构及基站的设计等问题进行了较深入的讨论。
The laser scanning head for detecting, CCD ( or PSD) as optoelectronic receiving device and closed loop measure'ment controled by microcomputer are used. 该方法是利用激光测头扫描探测,CCD(电荷耦合器件)或PSD作为光电接收器件,利用微机控制的闭环测量方法。
Recently, GaN as one of the ⅲ-nitride semiconductor, has attracted great interest because of the large amount of applications in optoelectronic and microelectronic device field due to its merits of large, direct bandgap, high physics and chemical stability at high temperature. Ⅲ族氮化物化合物半导体GaN是目前半导体领域的研究热点之一,具有宽禁带、高温下物理、化学性质稳定等特点,在光电子、微电子等领域有广泛的应用。
Application and Development of Cryogenic Refrigeration Technology in Optoelectronic Device 低温制冷技术在光电器件中的应用及发展
The optoelectronic integrated circuit ( OEIC) is a new device which combined semiconductor-photoelectric devices and other devices on the same chips or underlays. In the last 10 years, the research of OEIC focused mainly on optoelectronic receiver. 光电集成电路是一类将半导体光电子器件和电子器件集成在同一芯片或衬底上的新型光电子器件,在过去的十年中,光电集成电路(OEIC)的研究集中在光接收机。
Nano-silicon structure has many optoelectronic characteristics differ from bulk silicon due to its quantum confinement effect. It show extensive application prospect in light-emitting device, light-detector, optoelectronic integrated device, and sensor. 硅纳米结构由于量子限制效应有许多不同于体硅的光学及光电性能,它在发光器件、光探测器件、光电集成器件以及传感器等领域有广阔的应用前景。
Design of novel absorptive thin film for laser welding in optoelectronic device capsulation 光电子封装中新型激光焊接吸收薄膜的设计
The Progress of R& D on Information Optoelectronic Device and Technology in China 我国信息光电子器件与技术研究开发的若干进展
Fiber grating is give by UV light, refractive index period construct is bring about core axis, is important optoelectronic device in optical communication. 光纤光栅是通过紫外光曝光的方法在纤芯内产生沿纤芯轴向的折射率周期性变化而形成的相位光栅,它是光通信系统中的重要光电子器件。
Optical thin film plays an important role in Modern Optics. Without the optical thin film, there are no many complex high performance optical instruments, optoelectronic device and optical system. 现代光学工程中,光学薄膜具有重要地位,可以说,没有光学薄膜,就没有当今许多复杂的高性能的光学仪器、光电子器件以及各种光电系统。
By combining the three terminal negative resistance devices and silicon photo detectors, the author of this paper has proposed and composed a novel category of optoelectronic devices& silicon photo negative resistance device successfully. 将三端负阻器件与硅光电探测器相结合,通过新的构思成功地提出并构成了一类新型光电器件&硅光电负阻器件。
Semiconductor optical amplifier ( SOA) has been widely applied in the optical communication field as a core component of semiconductor optoelectronic device. 半导体光放大器(SOA)作为光纤通信领域核心器件之一,在光纤通信领域得到了广泛的应用。
Pulsed laser welding technique is commonly used in optoelectronic device packaging. But the existence of post welding shift will cause great loss of device coupling efficiency, reducing the device performance. 激光焊接技术常用于光电子器件封装固定,但是焊后偏移会造成器件耦合功率的损失,降低器件封装效率和器件性能。
Optical Fiber Panel ( OFP)' s ability of collecting light and resolution are very strong. It is one of the indispensable components of the optoelectronic imaging device. 光纤面板具有很高的集光能力和分辨率,是光电成像器件不可缺少的元件之一。
The use of the device on the other points the ball and made optoelectronic device is radiation-calibration, and confirmed to meet the radiometric calibration and measurement accuracy. 利用该装置对积分球和其它光电设备进行了绝对辐射定标,证实能够满足辐射定标与测量精度的要求。
To improve the light emission of silicon is the foundation for the development of silicon-based optoelectronic device and the realization of silicon-based optoelectronic integration. 提高硅的发光效率是开发硅基光电子器件、实现硅基光电集成的基础。
Photo-induced charge transfer can get enhanced in one dimensional ordered nanocomposites and thus can greatly improve the separation and transportation of charge carriers which are the key factors influencing optoelectronic device performance. 一维纳米有序复合结构增强的光致电荷转移可显著提高载流子的解离和传输效率,因而为优化光电功能器件性能的有效途径之一。
Moreover, the optoelectronic transitions, which could be directly correlated with the electronic band structures, play an important role in the optoelectronic device design. 此外,直接和材料电子能带结构相关的光电跃迁在光电子器件设计过程中起着很重要的作用。
It records the intensity information of interferograms digitally by using optoelectronic recording device such as Charge Coupled Devices ( CCD), stores it in a computer, and then processes the data by corresponding algorithms to gain the information of the original object. 它利用电荷耦合器件(ChargeCoupledDevices,简称CCD)等光电记录器件以数字化的方式记录全息干涉图的强度信息并输入计算机,使用相应算法进行数据处理,获得原始物波信息。
In order to make sure optoelectronic device works well at variable temperature, understanding and describing the evolutions of optical constants, electronic excitations, and absorption coefficient at different temperature are pre-requisite. 为了确保光电子器件能在变温环境下正常工作,首先要了解和描述材料的光学常数、电子激发和吸收系数在不同温度下的演变过程。
The inorganic/ organic hybrid optoelectronic device is an interesting field. 有机/无机混合光电子器件是一个有兴趣的领域。
The results also confirmed ZnO films optoelectronic device can be prepared by the simple chemical vapor deposition method. 这个结果证实了ZnO薄膜的发光器件也可以通过简单的化学气相沉积方法实现。
Silicon carbide ( SiC), which has large band gaps, high critical breakdown field strength, high electron mobility and good thermal conductivity, is considered as an ideal material to manufacture the optoelectronic integrated device with high temperature, high frequency, high power and radioresistance. SiC以其特有的大禁带宽度、高临界击穿场强、高电子迁移率、高热导率等特点,成为制造高温、高频、大功率、抗辐照及光电集成器件的理想材料。
As a new kind of optoelectronic device, FBG has brought a milestone revolution not only in optical fiber communication technology and optical fiber sensing technology but also in other related fields. Its market has expanded continuously in recent years. 作为一种新型的光电子器件,光纤光栅不仅在光纤通信技术和光纤传感技术而且在其他相关领域中均引起了一场新的里程碑式革命,其市场近年来不断扩大。